Оперативная память kingston ddr3 2gb

Две плашки по 2 gb в наличии. Плашки из набора: KHX1600C9D3T1K3/6GX 6GB (2GB 256M x 64-Bit x 3 pcs.) DDR3-1600 CL9 240-Pin DIMM Kit DESCRIPTION Kingston's KHX1600C9D3T1K3/6GX is a kit of three 256M x 64-bit (2GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory modules, based on eight 256M x 8-bit FBGA components per module. Each module kit supports Intel XMP (Extreme Memory Profiles). Total kit capacity is 6GB. Each module kit has been tested to run at DDR3-1600 at a low latency timing of 9-9-9-27 at 1.65V. The SPDs are programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers. The JEDEC standard electrical and mechanical specifications are as follows: *Power will vary depending on the SDRAM used. FEATURES • JEDECstandard1.5V(1.425V~1.575V)PowerSupply • VDDQ=1.5V(1.425V~1.575V) • 667MHzfCKfor1333Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 9, 8, 7, 6 • ProgrammableAdditiveLatency:0,CL-2,orCL-1clock • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • OnDieTerminationusingODTpin • AverageRefreshPeriod7.8usatlowerthanTCASE85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB : Height 2.401” (61.00mm) w/ heatsink, single sided component Continued >> SPECIFICATIONS CL(IDD) Row Cycle Time (tRCmin) Refresh to Active/Refresh Command Time (tRFCmin) Row Active Time (tRASmin) Power (Operating) UL Rating Operating Temperature Storage Temperature 9 cycles 49.5ns (min.) 160ns (min.) 36ns (min.) 0.795 W* (per module) 94 V - 0 0o C to 85o C -55o C to +100o C Document No. 4805275-001.C00 09/29/11 Page 1